39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·Integrated harmonic terminations\n·GaN-on-SiC technology\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01;

MACOM

WINSEMI
SOP8

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

上传：深圳市纳立科技有限公司

MICROCHIP
DIP32

Microchip

微芯科技

上传：深圳市东来宝电子科技有限公司

WINSEMI
SOT23-3

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

上传：深圳市纳立科技有限公司

WS
TO-92

WS

上传：深圳庞田科技有限公司