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WS1A2639

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639V2-05

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639V2-06

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639-V2-R00A

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639-V2-R1

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639-V2-R3K

GaN on SiC Power Amplifier Module for 5G

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2

文件:391.28 Kbytes 页数:7 Pages

WOLFSPEED

WS1A2639-V1-R3K

38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply ·GaN-on-SiC technology\n·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01;

MACOM

技术参数

  • Min Frequency (MHz):

    2496

  • Max Frequency(MHz):

    2690

  • P3dB Output Power(W):

    50

  • Gain(dB):

    16.5

  • Efficiency(%):

    57

  • Operating Voltage(V):

    48

  • Package Category:

    Surface Mount

  • Form:

    Packaged Discrete Transistor

  • Technology:

    GaN-on-SiC

供应商型号品牌批号封装库存备注价格
MACOM
24+
5000
原装军类可排单
询价
Bourns
22+
NA
5889
加我QQ或微信咨询更多详细信息,
询价
BOURNS
24+
插件
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
SAMWH
2022+
DIP
51200
原厂代理 终端免费提供样品
询价
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
询价
23+
65480
询价
Bourns
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
BOURNS/伯恩斯
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
WHITE
QQ咨询
QFP
112
全新原装 研究所指定供货商
询价
white
三年内
1983
只做原装正品
询价
更多WS1A2639供应商 更新时间2025-10-13 10:07:00