丝印：WNSC6D10650；Package：TO220-2L；Silicon Carbide Diode

文件：442.04 Kbytes 页数：11 Pages

WEEN

瑞能半导体

碳化硅二极管

• New 6th Generation Technology• Low Forward Voltage Drop• Low Reverse Leakage Current• High Forward Surge Capability IFSM• Reduced Losses in Associated MOSFET• Reduced EMI• Reduced Cooling Requirements• RoHS Compliant;

WeEn

瑞能半导体

Silicon Carbide Diode

文件：442.04 Kbytes 页数：11 Pages

WEEN

瑞能半导体

碳化硅功率二极管

• New 6th Generation Technology\n• Low Reverse Leakage Current\n• Reduced Losses in Associated MOSFET\n• Reduced Cooling Requirements\n• AEC-Q101 qualified\n;

WeEn

瑞能半导体

碳化硅二极管

• New 6th Generation Technology\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• High Forward Surge Capability IFSM\n• Reduced Losses in Associated MOSFET\n• Reduced EMI\n• Reduced Cooling Requirements\n• RoHS Compliant;

WeEn

瑞能半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE SCHOTTKY DIODE I

WEEN

瑞能半导体