丝印：WNSC2D10650D；Package：TO252；Silicon Carbide Diode

文件：500.17 Kbytes 页数：11 Pages

WEEN

瑞能半导体

丝印：WNSC2D10650T；Package：DFN8*8；Silicon Carbide Diode

文件：515.049 Kbytes 页数：11 Pages

WEEN

瑞能半导体

丝印：WNSC2D10650X；Package：TO220F-2L；Silicon Carbide Diode

文件：470.82 Kbytes 页数：11 Pages

WEEN

瑞能半导体

碳化硅二极管

• Highly stable switching performance\n• Extremely fast reverse recovery time\n• Superior in efficiency to Silicon Diode alternatives\n• Reduced losses in associated MOSFET\n• Reduced EMI\n• Reduced cooling requirements\n• RoHS compliant;

WeEn

瑞能半导体

Silicon Carbide Diode

文件：500.17 Kbytes 页数：11 Pages

WEEN

瑞能半导体

Silicon Carbide Diode

文件：515.049 Kbytes 页数：11 Pages

WEEN

瑞能半导体

Silicon Carbide Diode

文件：470.82 Kbytes 页数：11 Pages

WEEN

瑞能半导体

碳化硅二极管

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies. • Highly stable switching performance\n• Extremely fast reverse recovery time\n• Superior in efficiency to Silicon Diode alternatives\n• Reduced losses in associated MOSFET\n• Reduced EMI\n• Reduced cooling requirements\n• RoHS compliant;

WeEn

瑞能半导体

碳化硅二极管

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies. • Highly stable switching performance\n• Extremely fast reverse recovery time\n• Superior in efficiency to Silicon Diode alternatives\n• Reduced losses in associated MOSFET\n• Reduced EMI\n• Reduced cooling requirements\n• RoHS compliant\n• Insulated package rated at 2500V RMS;

WeEn

瑞能半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE SCHOTTKY DIODE

WEEN

瑞能半导体