N-Channel SJ-MOS EM

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOS™ C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOS™ C2系列产品具有更好的性价比。

Wayon

维安

Superior Avalanche Rugged Technology

文件：192.04 Kbytes 页数：7 Pages

SEMIHOW

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯