中高压MOS

F-Chip

福芯微电子

300V N-Channel MOSFET

Features • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V • Low gate charge ( typical 3.7 nC) • Low Crss ( typical 3.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：746.5 Kbytes 页数：9 Pages

Fairchild

仙童半导体

300V N-Channel MOSFET

文件：732.82 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：304.86 Kbytes 页数：2 Pages

ISC

无锡固电