中高压MOS

F-Chip

福芯微电子

300V N-Channel MOSFET

Features • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V • Low gate charge ( typical 3.7 nC) • Low Crss ( typical 3.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：746.5 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

300V N-Channel MOSFET

Features • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V • Low gate charge ( typical 3.7 nC) • Low Crss ( typical 3.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：746.5 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：730.54 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体