IGBT

General description High speed IGBT with anti-parallel diode in TO247 package. Features and benefits • High speed with low switching losses • Fast and soft recovery anti-parallel diode • Positive VCE(sat) temperature coefficient • Trench gate field-stop technology • Halogen Free package a

文件：843.98 Kbytes 页数：15 Pages

WEEN

瑞能半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH FD ST 650V 91A TO247

WEEN

瑞能半导体

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

文件：1.32999 Mbytes 页数：10 Pages

Bourns

伯恩斯

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

文件：374.45 Kbytes 页数：4 Pages

ISC

无锡固电

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 1.70 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

文件：530.17 Kbytes 页数：2 Pages

LUGUANG

鲁光电子