IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

文件：374.45 Kbytes 页数：4 Pages

ISC

无锡固电

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 1.70 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

文件：530.17 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 2.30 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

文件：1.59953 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

Super Junction N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC-DC Switching Power Supply

文件：522.63 Kbytes 页数：7 Pages

HUIXIN

慧芯电子