W632GU8KT中文资料双倍数据传输速率同步动态随机存取内存-3rd generation(第三代)数据手册Winbond规格书

描述 Description

The W632GU8KT is a 2G bits DDR3L SDRAM and speed involving -11/11I, -12/12I and -15/15I

特性 Features

•Power Supply: VDD, VDDQ = 1.35V(typ.), VDD, VDDQ=1.283V to 1.45V
• Double Data Rate architecture: two data transfers per clock cycle
• 8 bit prefetch architechure
• Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-The-Fly (OTF)
• Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
• DLL aligns DQ and DQS transitions with clock
• Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Refresh, Self-Refresh, Auto Seif- refresh (ASR) and Partial array self refresh (PASR)
• Data masks (DM) for write data
• Write Latency WL = AL + CWL
• System level timing calibration support via write leveling and MPR read pattem
• Asynchronous RESET# pin for Power-up initialization sequence reset function
• Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes
• Package:VFBGA 78 Ball (8x10.5 mm2 with thickness of 1.0 mm), RoHS compliant