W631GG6KS中文资料双倍数据传输速率同步动态随机存取内存-3rd generation(第三代)数据手册Winbond规格书

描述 Description

The W631GG6KS is a 1G bits DDR3 SDRAM and speed involving -11, -12/12I and -15/15I

特性 Features

•Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V
• Eight internal banks per chip select for concurrent operation
• CAS Latency: 6, 7, 8, 9, 10, 11 and 13
• Programmable read burst ordering: interleaved or nibble sequential
• Edge-aligned with read data and center-aligned with write data
• Differential clock inputs (CK, CK#)
• Posted CAS with programmable additive latency (AL = 0, CL -1 and CL -2) for improved command, address and data bus efficiency
• Auto-precharge operation for write bursts
• Precharged Power Down ans Active Power Down
• Programmable CAS Write Latency (CWL) per operating frequency
• Multi purpose register (MRR) for readout a predefined system timing calibration bit sequence
• ZQ Calibration for output driver and ODT using extermal reference resistor to ground
• Programmable on-die termination (ODT) for data, data mask and differential strobe pairs
• 2K Byte page size
• Package:VFBGA96 Ball (7.5x13mm2 with thickness of 1.0 mm), RoHS compliant