744878003

Marking：W3R3；WE-DD SMT Shielded Coupled Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

CMSZDA2V4

Marking：W3W；Package：SOT-323；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMSZDA2V4Seriessilicondualzenerdiodeisahighlyqualityvoltageregulator,connectedinacommonanodeconfiguration,foruseinindustrial,commercial,entertainmentandcomputerapplications.

ESD3.3V35T-4L

Marking：W34；Package：SOT-353；Transient Voltage Suppressors for ESD Protection

Feature 41~56WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsFourunidirectionalI/OLines LowClampingVoltage WorkingVoltages:3.3,5.0,10V LowLeakageCurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(Lightning)1.6~3.4A(8/20μ

PDTC143TT

Marking：W33；Package：SOT-23；NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PDTC143TT

Marking：W33；Package：SOT-23；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PJW3N10A_R2_00001

Marking：W3N10A；Package：SOT-223；100V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@2.2A

PJW3P06A_R2_00001

Marking：W3P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-2A

PJW3P06A-AU_R2_000A1

Marking：W3P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-2A

PJW3P10A_R2_00001

Marking：W3P10A；Package：SOT-223；100V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-2.6A

TMXW319

Marking：W319；SAW Bandpass Filters | Wireless Communications

Features 902.5MHzcenterfrequency CeramicpackageforSurfaceMountedTechnology 25MHzusablePassband 50ΩSingleConfiguration Applications GSMTxRFSAWFilter