W25N02JW

高性能NAND型闪存; Support DTR\n• Page Read Time with ECC Enable: 50us\n• Page Program Time: 250us(typ.)\n• Block Erase Time: 2ms(typ.)\n• Support OTP Memory Area\n• Support HW reset;

2Gb Serial NAND Flash Memory with uniform 2KB+64B page size with STR=166Mhz & DTR=83Mhz\n

W25N02JWSFIC TR

Package：16-SOIC（0.295"，7.50mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：2G-BIT SERIAL NAND FLASH, 1.8V

Winbond Electronics

W25N02JWSFIF

Package：16-SOIC（0.295"，7.50mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：2G-BIT SERIAL NAND FLASH, 1.8V

Winbond Electronics

W25N02JWSFIF TR

Package：16-SOIC（0.295"，7.50mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：2G-BIT SERIAL NAND FLASH, 1.8V

Winbond Electronics

CED25N02

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=23mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=33mW@VGS=2.5V. RoHScompliant.

CEU25N02

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=23mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=33mW@VGS=2.5V. RoHScompliant.

SDD25N02

DiscreteDiodes