丝印：W2；Package：79A；SILICON POWER MOS FET

4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6

文件：288.55 Kbytes 页数：12 Pages

RENESAS

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丝印：W2；Package：SOT-553；LOW CAPACITANCE TVS DIODE ARRAY

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: ±8kV – IEC61000-4-4 (EFT) 40A (5/50ns) RoHS Compliant – IEC61000-4-5 (Lightning) 5A (8/20μs) A

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LEIDITECH

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丝印：W2；Package：SOT665；Very low capacitance unidirectional quadruple ESD protection diode arrays

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NEXPERIA

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丝印：W2；Package：SOD-323；Silicon E p i taxial Planar Switching Diode

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丝印：W2；Package：SOD-123；Silicon Planar Zener Diodes

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SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：W2；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

文件：110.66 Kbytes 页数：5 Pages

PANJIT

強茂