丝印：W048U65C；Package：TOLL；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.) (5) Less susceptible to

文件：896.51 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：W048Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.) (5) Less susceptible to

文件：635.39 Kbytes 页数：12 Pages

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整流器 - 螺柱型

Littelfuse

力特

整流器 - 螺柱型

Littelfuse

力特

整流器 - 螺柱型

Littelfuse

力特

Package：4-圆形，WOB；包装：散装 类别：分立半导体产品 二极管 - 桥式整流器 描述：BRIDGE RECT 1PHASE 400V 1.5A WOB

ONSEMI

安森美半导体

Package：4-圆形，WOG；包装：托盘 类别：分立半导体产品 二极管 - 桥式整流器 描述：BRIDGE RECT 1PHASE 400V 1.5A WOG

Vishay General Semiconductor - Diodes Division

Package：4-圆形，WOG；包装：散装 类别：分立半导体产品 二极管 - 桥式整流器 描述：BRIDGE RECT 1PHASE 400V 1.5A WOG

Vishay General Semiconductor - Diodes Division