Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.27 V at IF = 5 A

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世

Trench MOS Schottky technology

文件：93.09 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 45V 20A TMBS

Vishay General Semiconductor - Diodes Division

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB, TO-247 and D2PAK these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection appl

文件：105.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB, TO-247 and D2PAK these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection appl

文件：105.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB, TO-247 and D2PAK these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection appl

文件：105.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体