Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC

文件：153.47 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier

文件：152.12 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC

文件：153.47 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier

文件：141.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

分立 ·Trench MOS Schottky technology Gen 2\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世

Package：TO-220-2；包装：管件管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 200V 5A TO220AC

Vishay General Semiconductor - Diodes Division