| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VT2080C | Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：130.87 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT2080C | Dual Trench MOS Barrier Schottky Rectifier 文件：148.69 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT2080C | Dual Trench MOS Barrier Schottky Rectifier 文件：163.74 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：158.85 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：204.62 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：204.62 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：130.87 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：130.87 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.69 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：135.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VT2080C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO220AB |
100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHY |
2012+ |
TO220 |
1300 |
普通 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
TO220AB |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO220AB |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VIS |
23+ |
TO-220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY |
1036+ |
TO220AB |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY |
23+ |
TO220 |
2550 |
原厂原装正品 |
询价 |
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