| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VT1080C | Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.96 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VT1080C | Dual Trench MOS Barrier Schottky Rectifier 文件：148.81 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：152.32 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：202.22 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：202.22 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.96 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.96 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.81 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.81 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.81 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
VT1080C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
Vishay |
2023+环保现货 |
TO-220AB |
5050 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
Vishay |
26+ |
SOT-89 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
22+ |
TO220 |
20000 |
只做原装 |
询价 | |||
VISHAY |
23+ |
TO220 |
2525 |
原厂原装正品 |
询价 | ||
VISHAY |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 |
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