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VT1080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:130.96 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件:152.32 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:202.22 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-E3_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:202.22 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080CHM3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:130.96 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-M3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:130.96 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C_12

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-E3/4W

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT1080C-E3SLASH4W

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    VT1080C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
询价
VISHAY/威世
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Vishay
2023+环保现货
TO-220AB
5050
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原装现货
询价
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
23+
TO220
2525
原厂原装正品
询价
VISHAY
23+
TO220
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY
24+
TO220
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
询价
更多VT1080C供应商 更新时间2021-9-14 10:50:00