Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：152.32 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：202.22 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：202.22 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：148.81 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：148.81 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Vishay

威世科技

肖特基二极管与整流器 10A,80V,TRENCH

Vishay

威世科技

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOT 80V 5A TO220AB

Vishay General Semiconductor - Diodes Division