N-Channel Mosfet

● N-Channel\n● Low On-Resistance\n● Fast Switching\n● Repetitive Avalanche Allowed up to Tjmax\n● Lead-Free, RoHS Compliant，Hg-Free\n;

Vergiga

威兆半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

文件：131.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司