| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：131.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：157.03 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a 文件：202.27 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a 文件：202.27 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：131.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：131.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VT3060C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SOP-8 |
6000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
VISHAY |
25+ |
TO220 |
260 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY原装 |
25+23+ |
TO-220 |
24042 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
专业铁帽 |
TO-220 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
VISHAY/威世 |
20+ |
TO-220 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
询价 | ||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY/威世 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
4500 |
原装正品假一罚百!可开增票! |
询价 |
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