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VS-1N3879R

Fast Recovery Diodes (Stud Version), 6 A, 12 A

FEATURES •Shortreverserecoverytime •Lowstoredcharge •Widecurrentrange •Excellentsurgecapabilities •StandardJEDEC®types •Studcathodeandstudanodeversions •Fullycharacterizedreverserecoveryconditions •Materialcategorization:fordefinitionsofcompliance pleases

VishayVishay Siliconix

威世科技

VS-1N3879R

包装:散装 封装/外壳:DO-203AA,DO-4,接线柱 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE GEN PURP 50V 6A DO203AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

1N3879

FastRecoveryRectifier

FastRecoveryRectifier ●FastRecoveryRectifier ●175°CJunctionTemperature ●VRRM100to400Volta ●6AmpsCurrentRating

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3879

HighPower-FastRecoveryRectifiers

Features •HighSurgeCapability •Typesupto400VVRRM

AMERICASEMI

America Semiconductor, LLC

1N3879

SiliconFastRecoveryDiode

etc2List of Unclassifed Manufacturers

etc2未分类制造商

1N3879

FASTRECOVERYRECTIIFER

FASTRECOVERYRECTIIFER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

1N3879

FastRecoveryDiodes(StudVersion),6A,12A

VishayVishay Siliconix

威世科技

1N3879

GENERALPURPOSEINDUSTRIAL

GENERALPURPOSE&INDUSTRIAL FASTRECOVERYRECTIFIERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N3879

FastRecoveryDiodes(StudVersion)

FEATURES •Shortreverserecoverytime •Lowstoredcharge •Widecurrentrange •Excellentsurgecapabilities •StandardJEDEC®types •Studcathodeandstudanodeversions •Fullycharacterizedreverserecoveryconditions •Materialcategorization:fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技

1N3879

6AMPS50-400VOLTS120nsecFASTRECOVERYRECTIFIER

6AMPS50-400VOLTS120nsecFASTRECOVERYRECTIFIER

SSDI

SSDI

1N3879

FastRecoveryRectifier

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N3879

FASTRECOVERYPOWERRECTIFIERS

GENERALPURPOSE&INDUSTRIAL FASTRECOVERYRECTIFIERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N3879

FastRecoveryDiodes(StudVersion),6/12/16A

VishayVishay Siliconix

威世科技

1N3879

FASTRECOVERYDIODES

FEATURES ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■StandardJEDECtypes ■Studcathodeandstudanodeversions ■Fullycharacterizedreverserecoveryconditions

IRFInternational Rectifier

英飞凌英飞凌科技公司

1N3879

SiliconFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

1N3879

SiliconFastRecoveryDiode

Features •HighSurgeCapability •Typesupto400VVRRM •NotESDSensitive

GENESIC

GeneSiC Semiconductor, Inc.

1N3879

FastRecoveryDiodes(StudVersion),6A,12A

VishayVishay Siliconix

威世科技

1N3879

6A,12AAND16AFASTRECOVERYRECTIFIERS

FEATURES ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■StandardJEDECtypes ■Studcathodeandstudanodeversions ■Fullycharacterizedreverserecoveryconditions

IRFInternational Rectifier

英飞凌英飞凌科技公司

1N3879

SiliconFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

1N3879R

SiliconFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

产品属性

  • 产品编号:

    VS-1N3879R

  • 制造商:

    Vishay General Semiconductor - Diodes Division

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    标准型,反极性

  • 电流 - 平均整流 (Io):

    6A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    底座,接线柱安装

  • 封装/外壳:

    DO-203AA,DO-4,接线柱

  • 供应商器件封装:

    DO-203AA(DO-4)

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 50V 6A DO203AA

供应商型号品牌批号封装库存备注价格
VISHAY
1809+
DO-203
326
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY-威世
24+25+/26+27+
DO-203
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Vishay General Semiconductor -
24+
DO-203AA(DO-4)
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
Vishay
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
VIS
RoHSCompliant
25
neworiginal
询价
Vishay
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
一级代理
23+
N/A
98000
一级代理放心采购
询价
更多VS-1N3879R供应商 更新时间2021-9-14 10:50:00