VQ100分立半导体产品的晶体管-FETMOSFET-单个规格书PDF中文资料

| 厂商型号 |
VQ100 |
| 参数属性 | VQ100 包装为管件;类别为分立半导体产品的晶体管-FETMOSFET-单个;产品描述:MOSFET N-CH 60V 0.4A TO-205 |
| 功能描述 | Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology |
| 文件大小 |
10.50173 Mbytes |
| 页面数量 |
212 页 |
| 生产厂商 | Microsemi |
| 中文名称 | 美高森美 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-11-30 23:00:00 |
| 人工找货 | VQ100价格和库存,欢迎联系客服免费人工找货 |
VQ100规格书详情
Features and Benefits
High Capacity
• 15 k to 1 M System Gates
• Up to 144 kbits of True Dual-Port SRAM
• Up to 300 User I/Os
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
• 3.3 V, 66 MHz 64-Bit PCI†
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES) Decryption (except ARM®-enabled ProASIC®3 devices) via JTAG (IEEE 1532–compliant)†
• FlashLock® to Secure FPGA Contents
Low Power
• Core Voltage for Low Power
• Support for 1.5 V-Only Systems
• Low-Impedance Flash Switches
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Advanced I/O
• 700 Mbps DDR, LVDS-Capable I/Os (A3P250 and above)
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Wide Range Power Supply Voltage Support per JESD8-B, Allowing I/Os to Operate from 2.7 V to 3.6 V
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X† and LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-LVDS (A3P250 and above)
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold Sparing I/Os‡
• Programmable Output Slew Rate† and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
Clock Conditioning Circuit (CCC) and PLL†
• Six CCC Blocks, One with an Integrated PLL
• Configurable Phase-Shift, Multiply/Divide, Delay Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Embedded Memory†
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations)†
• True Dual-Port SRAM (except ×18)
ARM Processor Support in ProASIC3 FPGAs
• M1 ProASIC3 Devices—ARM®Cortex™-M1 Soft Processor Available with or without Debug
产品属性
- 产品编号:
VQ1004P-2
- 制造商:
Vishay Siliconix
- 类别:
分立半导体产品 > 晶体管 - FET,MOSFET - 单个
- 包装:
管件
- 驱动电压(最大 Rds On,最小 Rds On):
5V,10V
- Vgs(最大值):
±20V
- 描述:
MOSFET N-CH 60V 0.4A TO-205
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILNX |
24+ |
NA/ |
3282 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY/威世 |
2023+ |
PDIP-14 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
INTERSIL |
22+ |
CDIP14 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
SIL |
25+23+ |
DIP |
71300 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
Calogic |
25+ |
200 |
公司优势库存 热卖中!! |
询价 | |||
DG/SIL |
24+ |
DIP |
350 |
询价 | |||
VISHAY |
12+ |
原厂封装 |
216 |
宇航IC只做原装假一罚十 |
询价 | ||
VISHAY |
23+ |
DIP14 |
5000 |
原装正品,假一罚十 |
询价 | ||
SILICON |
18+ |
DIP14 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
SILICONI |
05+ |
100 |
原装正品 |
询价 |

