丝印：VP22；Package：SOIC(D)；SN65HVD2x Extended Common-Mode RS-485 Transceivers

1 Features • Common-mode voltage range (–20 V to 25 V) more than doubles TIA/EIA-485 requirement • Receiver equalization extends cable length, signaling rate (SN65HVD2[3,4]) • Reduced unit-load for up to 256 nodes • Bus I/O protection to over 16-kV HBM • Failsafe receiver for open-circuit,

文件：1.55551 Mbytes 页数：37 Pages

TI

德州仪器

丝印：VP22；Package：SOIC(D)；SN65HVD2x Extended Common-Mode RS-485 Transceivers

1 Features • Common-mode voltage range (–20 V to 25 V) more than doubles TIA/EIA-485 requirement • Receiver equalization extends cable length, signaling rate (SN65HVD2[3,4]) • Reduced unit-load for up to 256 nodes • Bus I/O protection to over 16-kV HBM • Failsafe receiver for open-circuit,

文件：1.55551 Mbytes 页数：37 Pages

TI

德州仪器

丝印：VP22；Package：SOIC(D)；SN65HVD2x Extended Common-Mode RS-485 Transceivers

1 Features • Common-mode voltage range (–20 V to 25 V) more than doubles TIA/EIA-485 requirement • Receiver equalization extends cable length, signaling rate (SN65HVD2[3,4]) • Reduced unit-load for up to 256 nodes • Bus I/O protection to over 16-kV HBM • Failsafe receiver for open-circuit,

文件：1.55551 Mbytes 页数：37 Pages

TI

德州仪器

丝印：VP22；Package：SOIC(D)；SN65HVD2x Extended Common-Mode RS-485 Transceivers

1 Features • Common-mode voltage range (–20 V to 25 V) more than doubles TIA/EIA-485 requirement • Receiver equalization extends cable length, signaling rate (SN65HVD2[3,4]) • Reduced unit-load for up to 256 nodes • Bus I/O protection to over 16-kV HBM • Failsafe receiver for open-circuit,

文件：1.55551 Mbytes 页数：37 Pages

TI

德州仪器

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：459.62 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex VP2206 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件：757.75 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：459.62 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：459.62 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex VP2206 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件：757.75 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

文件：824.77 Kbytes 页数：14 Pages

MICROCHIP

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