VP2206N2中文资料PDF规格书
VP2206N2规格书详情
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
产品属性
- 型号:
VP2206N2
- 功能描述:
MOSFET 60V 0.9Ohm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SI |
21+ |
CAN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SI |
2023+ |
CAN3 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
MICROCHIP(美国微芯) |
2021+ |
TO-39-3 |
499 |
询价 | |||
Microchip Technology |
24+ |
TO-39 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
SUPERTEX |
22+ |
TO-39 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
MICROCHIP/微芯 |
22+ |
TO-39-3 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
SI |
2020+ |
CAN |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MICROCHIP(美国微芯) |
TO-39-3 |
8230 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
MICROCHIP(美国微芯) |
2112+ |
TO-39-3 |
31500 |
500个/袋一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
Microchip Technology |
23+ |
SMD |
69088 |
原装正品实单可谈 库存现货 |
询价 |