首页 >VP2110>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

VP2110

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

文件:456.67 Kbytes 页数:4 Pages

SUTEX

VP2110

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex VP2110 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件:512.809 Kbytes 页数:5 Pages

SUTEX

VP2110

P-Channel Enhancement-Mode Vertical DMOS FET

文件:761.51 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

VP2110

MOSFET, P-Channel Enhancement-Mode, -100V, 12 Ohm

VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature c Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-to-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

VP2110K1

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

文件:456.67 Kbytes 页数:4 Pages

SUTEX

VP2110K1-G

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex VP2110 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件:512.809 Kbytes 页数:5 Pages

SUTEX

VP2110ND

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

文件:456.67 Kbytes 页数:4 Pages

SUTEX

VP2110K1-G

P-Channel Enhancement-Mode Vertical DMOS FET

文件:761.51 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

VP2110K1

P-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

技术参数

  • BVdss min (V):

    -100

  • Rds (on) max (Ohms):

    12

  • Vgs(th) max (V):

    -3.5

  • CISSmax (pF):

    60

  • Packages:

    3\\SOT-23

供应商型号品牌批号封装库存备注价格
SUPERTEX
24+
SOT-23
2000
全新原装深圳仓库现货有单必成
询价
Supertex
19+
SOT-23
200000
询价
Supertex
20+
SOT-23
36800
原装优势主营型号-可开原型号增税票
询价
Supertex
24+
SOT-23
39000
原装现货假一赔十
询价
SUPERTEX
23+
SOT-23
808088
询价
Supertex
2025+
SOT-23
7695
全新原厂原装产品、公司现货销售
询价
SUPERTEX
24+
SOT-23
60000
询价
Supertex
2406+
SOT23
39000
优势代理渠道 原装现货 可全系列订货
询价
SUPERTEXINC
24+
SOT-23
3000
询价
SUPERTEX
23+
SOT23
57000
原装正品,假一罚十
询价
更多VP2110供应商 更新时间2026-1-22 11:22:00