OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

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STMICROELECTRONICS

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fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

文件：1.15181 Mbytes 页数：31 Pages

STMICROELECTRONICS

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?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

文件：510.48 Kbytes 页数：29 Pages

STMICROELECTRONICS

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?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件：388.88 Kbytes 页数：29 Pages

STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

文件：1.27175 Mbytes 页数：31 Pages

STMICROELECTRONICS

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

文件：1.15181 Mbytes 页数：31 Pages

STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

Description The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environmen

文件：632.41 Kbytes 页数：22 Pages

STMICROELECTRONICS

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fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

文件：1.15181 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II全自动保护功率MOSFET

The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.\n\n Fault f • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M;

ST

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