DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

The VND830AEP-E is a monolithic device made using| STMicroelectronics VIPower™ M0-3 Technology. The VND830AEP-E is intended for driving any type of multiple load with one side connected to ground.\nThe Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient Reverse battery protection\nProtection against loss of ground and loss of V\nCC\nIn compliance with the 2002/95/EC european directive\nCurrent limitation\nThermal shutdown\nDC short circuit current: 6A\nProportional load current sense\nCMOS compatible inputs\nOvervoltage clamp\nVery low standby powe;

ST

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Double channel high side driver

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STMICROELECTRONICS

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Package：24-PowerBSOP（0.295"，7.50mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRVR N-CHAN 1:1 PWRSSO24

STMICROELECTRONICS

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DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND830SP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

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STMICROELECTRONICS

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QUAD CHANNEL HIGH SIDE DRIVER

Description The VNQ830 is a quad HSD formed by assembling two VND830 chips in the same SO-28 package. The VND830 is a monolithic device made using| STMicroelectronics™ VIPower™ M0-3 Technology. The device is intended for driving any type of multiple load with one side connected to ground. Featur

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STMICROELECTRONICS

意法半导体

QUAD CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VNQ830M is a quad HSD formed by assembling two VND830M chips in the same SO-28 package. The VND830M is a monolithic device made by using| STMicroelectronics VIPower M0-3 Technology. The VNQ830M is intended for driving any type of multiple loads with one side connected to ground.

文件：315.97 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体