VND5N07TR-EMOS(场效应管)技术资料参数原装现货-114ic电子网

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VND5N07	文件：166.99 Kbytes Page：15 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07	文件：507.97 Kbytes Page：24 Pages	OMNIFETIIfullyautoprotectedPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07	文件：618.45 Kbytes Page：24 Pages	fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07-E	文件：618.45 Kbytes Page：24 Pages	fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07FI	文件：166.99 Kbytes Page：15 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07FM	文件：166.99 Kbytes Page：15 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VND5N07TR-E	文件：504.27 Kbytes Page：24 Pages	OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNK5N07FM	文件：618.45 Kbytes Page：24 Pages	fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNK5N07FM	文件：166.99 Kbytes Page：15 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNK5N07FM	文件：507.97 Kbytes Page：24 Pages	OMNIFETIIfullyautoprotectedPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNP5N07	文件：132.12 Kbytes Page：11 Pages	?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNP5N07FI	文件：507.97 Kbytes Page：24 Pages	OMNIFETIIfullyautoprotectedPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNP5N07FI	文件：166.99 Kbytes Page：15 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
VNP5N07FI	文件：618.45 Kbytes Page：24 Pages	fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	23+	TO-252	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市仟禧电子有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	22+	TO-252-3	20000	深圳原装现货正品有单价格可谈	询价
深圳市威尔健半导体有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市湘达电子科技有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	2022+	DPAK(TO-252)	8000	只做原装支持实单,有单必成。	询价
深圳市科恒伟业电子有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	21+	TO-252	9852	只做原装正品现货!或订货假一赔十!	询价
深圳庞田科技有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	2023+	DPAK(TO-252)	50000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市中联芯电子有限公司	VND5N07TR-EMOS(场效应管)	ST/意法	24+	TO-252	9000	只做原装正品有挂有货假一赔十	询价
深圳市宝隆宏业科技有限公司	VND5N07TR-E存储IC	ST/意法	2122+	SOT252	50000	全新原装正品,优势渠道,假一赔十	询价
深圳市富安睿科技有限公司	VND5NV07-E	ST	21+	TO-252	6000	绝对原裝现货	询价
艾睿国际（香港）有限公司	VND5NV07-E	ST	2021+	TO-252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多VND5N07TR-EMOS(场效应管)供应商更新时间2024-5-31 8:48:00

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