OMNIFET fully autoprotected Power MOSFET

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STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

ST

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OMNIFET：全自动保护功率MOSFET

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments • ESD protection \n• Logic level input threshold \n• High noise immunity \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Schmitt trigger on input \n• Integrated clamp;

ST

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

ST

意法半导体

Package：Pentawatt-5（水平，弯曲和错列引线）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半导体

Package：Pentawatt-5（直引线，交错配接深度）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半导体

Package：Pentawatt-5（水平，弯曲和错列引线）；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

意法半导体