VN3205N8资料使用说明书批发采购微芯科技-114ic电子网

首页 >VN3205N>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
VN3205N3	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205N3-G	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP002	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP003	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP005	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP013	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP014	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N6	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205N8	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205N8-G	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX

详细参数

型号：
VN3205N
功能描述：
MOSFET 50V 0.3Ohm
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	VN3205N8	MICROCHIP/微芯	25+	SOT-89	20300	MICROCHIP/微芯原装特价VN3205N8即刻询购立享优惠#长期有货	询价
深圳市河锋鑫科技有限公司	VN3205N8	SUPERTEX	18+	SOT-89	300000	原装正品可含税交易	询价
深圳市一线半导体有限公司	VN3205N8	SUPERTEX	24+	SOT89	10000		询价
深圳市佳鑫美电子科技有限公司	VN3205N8	SUTEX	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市振宏微科技有限公司	VN3205N8	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市安富世纪电子有限公司	VN3205N8	SUPERTEX	23+	SOT-89	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	VN3205N8	SUPERTEX	23+	SOT-89	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	VN3205N8	MICROCHIP/微芯	23+	SOT-89	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市科翼源电子有限公司	VN3205N8	SUPERTEX	23+	SOT-89	2731	原厂原装正品	询价
深圳市博中泰实业有限公司	VN3205N8	SUPERTEX	24+	SOT-89	60000	全新原装现货	询价

更多VN3205N供应商更新时间2026-1-17 9:04:00

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