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VN3205N3

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:459.17 Kbytes 页数:4 Pages

SUTEX

VN3205N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件:728.49 Kbytes 页数:6 Pages

SUTEX

VN3205N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

VN3205N3-G-P002

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

详细参数

  • 型号:

    VN3205N3

  • 功能描述:

    MOSFET 50V 0.3Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
SUPERTEX
24+
TO-92
230
询价
supertex
24+
TO-92
1689
进口原装正品优势供应
询价
supertex
24+
TO-92
18700
询价
supertex
TO-92
6688
17
现货库存
询价
Microchip
1837+
N/A
1023
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROCHIP(美国微芯)
2447
TO-92-3
31500
1000个/袋一级代理专营品牌!原装正品,优势现货,长
询价
MICROCHIP
25+
TO-92-3
3675
就找我吧!--邀您体验愉快问购元件!
询价
MICROCHIP(美国微芯)
2021+
TO-92-3
499
询价
supertex
23+
TO-92
5628
原厂原装
询价
SUPERTEXINC
23+
TO-92
50000
全新原装正品现货,支持订货
询价
更多VN3205N3供应商 更新时间2026-1-17 10:20:00