VN3205技术资料参数库存现货微芯科技第2页-114ic电子网

首页 >VN3205>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
VN3205N3-GP005	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP013	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N3-GP014	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N6	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205N8	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205N8-G	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205N8-G	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205ND	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX
VN3205ND	文件：459.17 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：459.17 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN3205NJ	文件：728.49 Kbytes Page：6 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an 文件：728.49 Kbytes 页数：6 Pages	SUTEX	SUTEX

技术参数

BVdss min (V)：
50
Rds (on) max (Ohms)：
0.3
CISSmax (pF)：
300
Vgs(th) max (V)：
2.4
Packages：
3\\SOT-893\\TO-92

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宇创芯科技有限公司	VN3205	SUPEXTEX	24+	SOT-89	9600	原装现货,优势供应,支持实单!	询价
贸泽芯城（深圳）电子科技有限公司	VN3205	SUPEXTEX	23+		11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市润联芯城科技有限公司	VN3205	SUPEXTEX	23+	SOT-89	50000	原装正品支持实单	询价
深圳市勤思达科技有限公司	VN3205N	SUTEX	12+	SOT89	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市欧立现代科技有限公司	VN3205N6	SUPEPTEP	24+	DIP	3000	原装现货,可开13%税票	询价
深圳市一线半导体有限公司	VN3205N6	SUPERTEXINC	24+	DIP-14P	30	现货	询价
深圳市鹏和科技有限公司	VN3205N8-G	MICROCHIP	24+	SOT89	5000	只做原装公司现货	询价
深圳市卓越微芯电子有限公司	VN3205N6	SUPEPTEP	25+	DIP	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市达恩科技有限公司	VN3205N3-G	supertex	24+	TO-92	1689	进口原装正品优势供应	询价
深圳市佳鑫美电子科技有限公司	VN3205N8	SUTEX	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电!	询价

更多VN3205供应商更新时间2026-4-17 15:17:00

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