N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：459.17 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX

QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN330SP(8932) is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving four indipendent resistive or inductive loads with one side connected to ground. ■ OUTPUT CURRENT: 1 A PER CHANNEL ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM VOLTAGE

文件：69.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN330SP(8932) is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving four indipendent resistive or inductive loads with one side connected to ground. ■ OUTPUT CURRENT: 1 A PER CHANNEL ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM VOLTAGE

文件：69.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN330SP(8932) is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving four indipendent resistive or inductive loads with one side connected to ground. ■ OUTPUT CURRENT: 1 A PER CHANNEL ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM VOLTAGE

文件：69.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VN330SP-32-E is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving four indipendent resistive or inductive loads with one side connected to ground. Active current limitation avoids dropping the system power supply in case of shorted loa

文件：158.21 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Quad high side smart Power solid state relay

Description The VN330SP-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving four indipendent resistive or inductive loads, with one side connected to ground. Active current limitation avoids dropping the system power supply in case of shorted load.

文件：204.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体