Max. load 3,000N (push/pull)

General Features Max. load 3,000N (push/pull) Max. speed at max. load 3.5mm/s Max. speed at no load 6.8mm/s Retracted length ≥ Stroke + 248mm IP rating IP66 Stroke 20~500mm Output signals Hall sensors Options Safety nut Voltage 12/24V DC; 12/24V DC (thermal switch) Operational temperatur

文件：348.77 Kbytes 页数：6 Pages

TIMOTION

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logi

文件：175.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logi

文件：175.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logi

文件：175.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN30NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level c

文件：64.44 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

■ MAXIMUM CONTINUOUS OUTPUT CURRENT (note 2): 31 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDER VOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN31 is a monolithic

文件：228.68 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

■ MAXIMUM CONTINUOUS OUTPUT CURRENT (note 2): 31 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDER VOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN31 is a monolithic

文件：228.68 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：459.17 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：728.49 Kbytes 页数：6 Pages

SUTEX