N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

文件：139.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：442.17 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：559.47 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：776.77 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

MOSFET, N-Channel Enhancement-Mode, 240V, 6.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

文件：54.79 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

文件：57.17 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

文件：139.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

文件：112.13 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

文件：54.79 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司