N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

文件：54.79 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 240-V (D-S) MOSFETs

Vishay

威世

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

文件：54.79 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件：442.17 Kbytes 页数：2 Pages

SUTEX

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

文件：57.17 Kbytes 页数：4 Pages

Motorola

摩托罗拉