| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMPS primary I.C. Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 文件:642.44 Kbytes 页数:34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS primary I.C. Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 文件:642.44 Kbytes 页数:34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po 文件:179.96 Kbytes 页数:25 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS primary I.C. Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 文件:642.44 Kbytes 页数:34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. DESCRIPTION VIPer20B combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400V 1.3A). Typical applications cover off line power supplies with a secondary max power capability of 30W. It is compatible fro 文件:151.49 Kbytes 页数:17 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. DESCRIPTION VIPer20B combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400V 1.3A). Typical applications cover off line power supplies with a secondary max power capability of 30W. It is compatible fro 文件:151.49 Kbytes 页数:17 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po 文件:179.96 Kbytes 页数:25 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W 文件:319.84 Kbytes 页数:31 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W 文件:319.84 Kbytes 页数:31 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SMPS PRIMARY I.C. DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po 文件:179.96 Kbytes 页数:25 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Marketing Status:
Active
- General Description:
VIPerPlus family
- RDS(on)_max(Ω):
30
- Transistor Breakdown Voltage_min(V):
800
- Drain Current_nom(A):
0.12
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
TI |
20+ |
SOIC-16 |
4520 |
原装正品现货 |
询价 | ||
ST |
25+ |
SO-8 |
2500 |
福安瓯为您提供真芯库存,真诚服务 |
询价 | ||
TI(德州仪器) |
23+ |
13650 |
公司只做原装正品,假一赔十 |
询价 | |||
STM |
24+ |
SOP16 |
5000 |
只做原装公司现货 |
询价 | ||
ST |
23+ |
DIP-7 |
30000 |
原装正品,假一罚十 |
询价 | ||
ST/意法半导体 |
25 |
8-SOIC |
6000 |
原装正品 |
询价 | ||
ST/意法半导体 |
23+ |
SOP-16 |
2500 |
正规渠道,只有原装! |
询价 | ||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
ST/意法 |
2403+ |
DIP8 |
6489 |
原装现货热卖!十年芯路!坚持! |
询价 |
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