BAS40-04

SurfaceMountSchottkyDiode

Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

BAS40-04

General-purposeSchottkydiodes

BAS40-04

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

BAS40-04

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

BAS40-04

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

BAS40-04

SCHOTTKYBARRIERDIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

BAS40-04

SurfaceMountSchottkyBarrierDiodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

BAS40-04

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

BAS40-04

SurfacemountSchottky-BarrierSingle-/Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

BAS40-04

SchottkyDiodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.