Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

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VishayVishay Siliconix

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：160.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：157.99 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：155.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：160.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.526 V at IF = 5A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

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Package：TO-220-3 全封装，隔离接片；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V ITO220

Vishay General Semiconductor - Diodes Division