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VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件:127.38 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世

VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.73 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世

VF30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.28 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VF30120C_V01

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件:127.38 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世

VF30120C-E3

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

文件:157.09 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VF30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VF30120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VF30120C_10

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.73 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世

VF30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

详细参数

  • 型号:

    VF30120C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
Vishay(威世)
24+
标准封装
8248
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
VISHAY/威世
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
-
23+
TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
25+
TO-220F
10000
全新原装现货库存
询价
VISHAY
25+23+
TO-220F
15496
绝对原装正品全新进口深圳现货
询价
VISHAY
2009+
TO-220
4700
普通
询价
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY
10+
TO-220F
3880
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多VF30120C供应商 更新时间2025-10-11 14:36:00