| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VF30120S | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
VF30120S | High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VishayVishay Siliconix 威世科技威世科技半导体 | | |
VF30120S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | |
详细参数
- 型号：
VF30120S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
JINGDAO/晶导微 |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY/威世 |
23+ |
ITO-220A |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世通 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY |
0731+ |
TO220 |
49 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY/威世通 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
21+ |
TO220 |
49 |
原装现货假一赔十 |
询价 |
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