| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件:168.62 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JES 文件:157.77 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件:215.28 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件:168.62 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件:168.62 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temp 文件:160.62 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件:216.53 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-22 文件:200.88 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件:127.95 Kbytes 页数:4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco 文件:167.06 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号:
VF2
- 制造商:
VISHAY
- 制造商全称:
Vishay Siliconix
- 功能描述:
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY原装 |
25+23+ |
TO-220F |
23890 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY原装 |
24+ |
TO-220F |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
2022+ |
ITO-220A |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY |
0731+ |
TO220F |
99 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3298 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
询价 |
相关规格书
更多- VF20120S-E3/45
- VF20120SG
- VF20120SG-E3/45
- VF20120SG-E3-4W
- VF20120SG-M3-4W
- VF20150C
- VF20150C-E3/4W
- VF20150C-M3-4W
- VF20150S-E3/4W
- VF20150SG_10
- VF20150SG-M3/4W
- VF20150S-M3/4W
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- VF20200G
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相关库存
更多- VF20120S-E3/4W
- VF20120SG_10
- VF20120SG-E3/4W
- VF20120SG-M3/4W
- VF20120S-M3/4W
- VF20150C_10
- VF20150C-M3/4W
- VF20150S
- VF20150SG
- VF20150SG-E3/4W
- VF20150SG-M3-4W
- VF20200C
- VF20200C-E3-4W
- VF20200G-E3/4W
- VF20M120C
- VF20P10102K
- VF2-10X
- VF2-15X
- VF2-25
- VF-229064-10-X
- VF230-CBBNA-200
- VF2-30X
- VF2-40X
- VF-24LU
- VF250
- VF250-2
- VF250A1
- VF25-10
- VF2510BGILF
- VF2510BGLF
- VF2510BGLN
- VF2510BGT
- VF25-15
- VF252-1
- VF252A
- VF252A2
- VF252B1
- VF252C
- VF25-7
- VF26715100J0G
- VF28
- VF28-11F24-S01
- VF28-11H24-S01
- VF28-15F24-S01
- VF28-61F14-S01

