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VF20100S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

文件:168.62 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JES

文件:157.77 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件:215.28 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

文件:168.62 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

文件:168.62 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temp

文件:160.62 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100SG

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件:216.53 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VF20100S-M3SLASH4W

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-22

文件:200.88 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件:127.95 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

文件:167.06 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    VF2

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
VISHAY原装
25+23+
TO-220F
23890
绝对原装正品全新进口深圳现货
询价
VISHAY原装
24+
TO-220F
30980
原装现货/放心购买
询价
VISHAY
23+
TO220F
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
ITO-220A
12888
原厂代理 终端免费提供样品
询价
VISHAY/威世
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
0731+
TO220F
99
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VISHAY/威世
24+
NA/
3298
原装现货,当天可交货,原型号开票
询价
VISHAY
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
24+
TO-220F
5000
全新原装正品,现货销售
询价
更多VF2供应商 更新时间2025-12-23 16:50:00