High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High voltage diffused silicon power rectifiers

文件：167.74 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS

文件：528.7 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS

文件：528.7 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High voltage diffused silicon power rectifiers

文件：167.74 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS

文件：528.7 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High voltage diffused silicon power rectifiers

文件：167.74 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS

文件：528.7 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High voltage diffused silicon power rectifiers

文件：167.74 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商