| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：321.01 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.99 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：143.4 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
VB20150S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3295 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
VISHAY |
25+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
GENERALSEMICONDUCTORVISHAY |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
GENERALSEMICONDUCTORVISHAY |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
VIS |
22+ |
TO-263AB |
6000 |
十年配单,只做原装 |
询价 | ||
GENERALSEMICONDUCTORVISHAY |
23+ |
NA |
800 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 | ||
GENERALSEMICONDUCTORVISHAY |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
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