首页 >VB20120C贴片三极管>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
VISHAY/威世 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VISHAY |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay General Semiconductor - |
24+ |
TO-263AB(D?PAK) |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
VISHAY |
23+ |
TO-263 |
8600 |
全新原装现货 |
询价 | ||
TOSHIBA/东芝 |
23+ |
SOP-8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
VISHAY/威世 |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
6000 |
原装正品,支持实单 |
询价 |
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