首页 >VB20100S-E3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VB20100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJES | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VB20100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
VB20100S-E3
- 功能描述：
肖特基二极管与整流器 20 Amp 100 Volt Single TrenchMOS
- RoHS：
否
- 制造商：
Skyworks Solutions, Inc.
- 产品：
Schottky Diodes
- 峰值反向电压：
2 V
- 正向连续电流：
50 mA
- 配置：
Crossover Quad
- 正向电压下降：
370 mV
- 最大功率耗散：
75 mW
- 工作温度范围：
- 65 C to + 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOT-143
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VIS |
22+ |
TO-263AB |
6000 |
十年配单,只做原装 |
询价 | ||
VIS |
23+ |
TO-263AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
VIS |
22+ |
TO-263AB |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VIS |
25+ |
TO-263AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
Vishay/GeneralSemiconduc |
24+ |
TO-263 |
1600 |
询价 | |||
VISHAY |
23+ |
TO-263AB |
6680 |
全新原装优势 |
询价 | ||
General Semiconductor / Vishay |
2022+ |
601 |
全新原装 货期两周 |
询价 | |||
VISHAY/威世 |
22+ |
TO-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
VISHAY |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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