High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICAT

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VishayVishay Siliconix

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High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low forward voltage drop, low power losses

文件：86.94 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：77.25 Kbytes 页数：4 Pages

VishayVishay Siliconix

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High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 150V 10A TO263AB

Vishay General Semiconductor - Diodes Division