| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VB10150S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VB10150S | High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
High efficiency operation FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
VB10150S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-263 |
8600 |
全新原装现货 |
询价 | ||
JINGDAO/晶导微 |
23+ |
GBU |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世通 |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY/威世通 |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
2020+ |
TO-263 |
30 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY |
24+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY/威世 |
2022+ |
241 |
全新原装 货期两周 |
询价 | |||
VISHAY/威世 |
22+ |
TO-263 |
20000 |
保证原装正品,假一陪十 |
询价 |
相关规格书
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