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VB10150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3

High efficiency operation

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-M3_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VB10150S

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-263
8600
全新原装现货
询价
JINGDAO/晶导微
23+
GBU
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY/威世
22+
TO-263
6000
十年配单,只做原装
询价
VISHAY/威世通
23+
TO-263
6000
原装正品,支持实单
询价
VISHAY/威世通
22+
TO-263
25000
只做原装进口现货,专注配单
询价
VISHAY
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
2020+
TO-263
30
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
24+
TO-263
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY/威世
2022+
241
全新原装 货期两周
询价
VISHAY/威世
22+
TO-263
20000
保证原装正品,假一陪十
询价
更多VB10150S供应商 更新时间2025-5-28 16:09:00