High efficiency operation

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：167.09 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：319.87 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技